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| BM2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.085 @ VGS = 4.5 V 0.115 @ VGS = 2.5 V ID (A) 2.8 2.4 TO-236 (SOT-23) G 1 3 S 2 D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg Limit 20 "8 2.8 2.2 Unit V A 10 1.6 1.25 W 0.80 -55 to 150 _C Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. RthJA 166 Symbol Limit 100 Unit _C/W www.bookly.comS 2-1 BM2302 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 3.6 A rDS(on) VGS = 2.5 V, ID = 3.1 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = 5 V, ID = 3.6 A IS = 1.6 A, VGS = 0 V 0.085 10 0.76 1.2 0.115 S V 6 A 4 0.07 0.085 W 20 V 0.65 "100 1 10 nA mA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-Resistancea Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 10 V VGS = 0 V, f = 1 MHz V, V MH V, 4.5 V, 3.6 VDS = 10 V VGS = 4 5 V ID = 3 6 A 5.4 0.65 1.60 340 115 33 pF F 10 nC C Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%.. td(on) tr td(off) tf VDD = 10 V, RL = 5 5 W V, 5.5 ID ^ 3.6 A, VGEN = 4 5 V RG = 6 W 36 A 4.5 V, 12 36 34 10 25 60 ns 60 25 BM2302 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics VGS = 5 thru 2.5 V 10 Transfer Characteristics 8 I D - Drain Current (A) I D - Drain Current (A) 2V 6 8 6 4 4 TC = 125_C 2 0, 0.5, 1 V 1.5 V 2 25_C -55_C 0 0 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 1000 Capacitance r DS(on)- On-Resistance ( W ) 0.12 VGS = 2.5 V 0.09 VGS = 4.5 V 0.06 C - Capacitance (pF) 800 600 400 Ciss 0.03 200 Crss Coss 0 0 2 4 6 8 10 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 3.6 A V GS - Gate-to-Source Voltage (V) Gate Charge 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A r DS(on)- On-Resistance ( W ) (Normalized) 0 1 2 3 4 5 6 7 4 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0.6 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-3 BM2302 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.16 I S - Source Current (A) TJ = 150_C 0.12 ID = 3.6 A 0.08 TJ = 25_C 0.04 1 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 14 12 10 Power (W) 8 6 4 -0.3 2 0 0 50 TJ - Temperature (_C) 100 150 0.01 Single Pulse Power 0.1 V GS(th) Variance (V) -0.0 ID = 250 mA -0.1 TC = 25_C Single Pulse -0.2 -0.4 -50 0.10 1.00 Time (sec) 10.00 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) |
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